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Anil Allampalli

Principal Design Enablement Modeling || IIT Kharagpur

Bengaluru

9+ years of work experience

GLOBALFOUNDRIES
May 20233 yrs 5 mosPresent

Bengaluru, Karnataka, India

GLOBALFOUNDRIES
Apr 20203 yrs 2 mosMay 2023

Bengaluru, Karnataka, India

Mar 20191 yr 2 mosApr 2020

Hyderabad, Telangana, India

Indian Institute of Technology, Kharagpur
Nov 20142 yrs 1 moNov 2016

India

High Power Microwave (HPM) pulses are used to disturb the electronic equipment’s. In nuclear explosion, a high power electromagnetic pulse (EMP) is generated. If such a pulse is generated without a nuclear explosion, it can be used as a nonlethal weapon that can cause the damage to electronic equipment’s. The peak power of HPM pulse is 100 MW and in the frequency range of 1–300 GHz with pulse width of 100ns. In the present work, a Resistive Sensor (RS) has been developed to measure the pulse power of HPM pulses. A resistive sensor made up of a rectangular semiconductor bar is placed inside the waveguide. When strong electric field incident on a semiconductor, its electrons are scattered by lattice imperfection therefore resistance of semiconductor changes. The resistance of semiconductor changes with electric field incident on it, forms the basis for RS operation. The Ohmic contacts are created on both ends of the semiconductor through vapor deposition. The field emission is responsible for linear V-I characteristic of semiconductor. When a semiconductor sample is placed inside S-band waveguide at the center and parallel to narrow wall of the waveguide, it influences wave propagation. The voltage standing wave ratio (VSWR) increases and it is compensated by using different dimensions of the semiconductor bar. The CST-simulation was performed to investigate the interaction of the semiconductor with microwave pulses. The absorption of microwave energy should be small; the average heating on the sensor should not exceed 1 to 2 K. The Voltage standing wave ratio was measured in the experimental setup and was validated with simulated results. A constant current source was designed and connected to semiconductor; when the electric field is incident on the semiconductor, its resistance changes and in-turn results a change in the voltage. The developed sensor can measure pulse power up to 60 dB

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Education

Indian Institute of Technology, Kharagpur

Master's degree, RF & Microwave Engineering

Indian Institute of Technology, Kharagpur

20153 yrs2018
Dr. B.C. Roy Engineering College

West Bengal University of Technology, Electronics and Communications Engineering

Dr. B.C. Roy Engineering College

20094 yrs2013

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Headline

Principal Design Enablement Modeling || IIT Kharagpur

About

I am interested in the device modelling and design. I am working as Principal Spice Modelling Engineer at Globalfoundries. I completed Master's from IIT Kharagpur specializing in RF & Microwave Engineering. I have the ability to start on new and unfamiliar topics and come to a solution on the problem through self-study and research. - Relevant Graduate Courses: Advanced Electromagnetic Engineering, Antenna Theory and Design, EMI/EMC applications, Microwave Design and Measurement Lab, RF Integrated Circuit Design. - Completed a course on Phase-locked Loops from NPTEL, Indian Institute of Technology, Madras ** Key Strengths : RF Circuit and System Design, Microwave Circuits Measurement, Component Characterisation, Antenna Design ** Simulation Tools: Cadence - Virtuoso, EMX, PeakView, ADS, CST Microwave Studio, HFSS ** Languages: MatLab, C, SKILL Programming, Python ** Hardware Tools: Vector Network Analyzer, Spectrum Analyzer, Power Meter, VNA Calibration kits, Signal Generator & Soldering station ** RF Design Concepts: S-Parameters, VSWR, Return loss, Impedance matching,Amplifier Design,Stability, Smith chart, Gain, Noise figure, P1dB, IP3 ** Antenna Concepts: Gain (dB & dBi), Directivity, Beamwidth (HPBW, FNBW), Polarization, Efficiency.

Location

Bengaluru

AI stack

ChatGPT

Work experience

Principal Design Enablement Engineer at GLOBALFOUNDRIES, May 2023 - Present · 3 yrs 5 mos, Bengaluru, Karnataka, India

Sr. Design Enablement Engineer at GLOBALFOUNDRIES, Apr 2020 - May 2023 · 3 yrs 2 mos, Bengaluru, Karnataka, India

Advanced System Engineer at VEM TECHNOLOGY Pvt Ltd, Mar 2019 - Apr 2020 · 1 yr 2 mos, Hyderabad, Telangana, India

Junior Research Fellow at Indian Institute of Technology, Kharagpur, Nov 2014 - Nov 2016 · 2 yrs 1 mo, India, High Power Microwave (HPM) pulses are used to disturb the electronic equipment’s. In nuclear explosion, a high power electromagnetic pulse (EMP) is generated. If such a pulse is generated without a nuclear explosion, it can be used as a nonlethal weapon that can cause the damage to electronic equipment’s. The peak power of HPM pulse is 100 MW and in the frequency range of 1–300 GHz with pulse width of 100ns. In the present work, a Resistive Sensor (RS) has been developed to measure the pulse power of HPM pulses. A resistive sensor made up of a rectangular semiconductor bar is placed inside the waveguide. When strong electric field incident on a semiconductor, its electrons are scattered by lattice imperfection therefore resistance of semiconductor changes. The resistance of semiconductor changes with electric field incident on it, forms the basis for RS operation. The Ohmic contacts are created on both ends of the semiconductor through vapor deposition. The field emission is responsible for linear V-I characteristic of semiconductor. When a semiconductor sample is placed inside S-band waveguide at the center and parallel to narrow wall of the waveguide, it influences wave propagation. The voltage standing wave ratio (VSWR) increases and it is compensated by using different dimensions of the semiconductor bar. The CST-simulation was performed to investigate the interaction of the semiconductor with microwave pulses. The absorption of microwave energy should be small; the average heating on the sensor should not exceed 1 to 2 K. The Voltage standing wave ratio was measured in the experimental setup and was validated with simulated results. A constant current source was designed and connected to semiconductor; when the electric field is incident on the semiconductor, its resistance changes and in-turn results a change in the voltage. The developed sensor can measure pulse power up to 60 dB

Education

Master's degree, RF & Microwave Engineering, Indian Institute of Technology, Kharagpur

West Bengal University of Technology, Electronics and Communications Engineering, Dr. B.C. Roy Engineering College

Anil Allampalli - Principal Design Enablement Engineer in Bengaluru | Tal